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October 15, 2016 Blogs
High-k metal gate (HKMG) technology for CMOS devices

High-k metal gate (HKMG) technology has become one of the front-runners for the next generation of CMOS devices. This new technology incorporates a high-k dielectric, which reduces leakage and improves…

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October 15, 2016 Blogs
Controlling the spin bowl environment to optimize spin coat quality

A variety of factors can affect the coat quality when spin processing. This article will focus on the role that the bowl environment, and in particlar the ability to control…

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October 15, 2016 Blogs
Lithography process simplification for reduced cost of ownership

Cost of ownership plays an important role in lithography process materials and methods decisions. Process simplifications brought about by layer-to-layer synergy drive significant cost of ownership advantages for multilayer lithography…

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October 15, 2016 Blogs
Supply chain flexibility for 3D device packaging

Limitations of Moore's Law Ultimately, performance of computers and other electronic products will be limited by transistor size and density. Because the semiconductor industry has pushed to create ever-smaller features…

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October 15, 2016 Blogs
Planarization: Leveling extreme topography for microelectronics

Fabrication of microelectronic devices increasingly involves the creation of high-aspect-ratio structures (those with large height or depth and narrow width, such as trenches, vias, columns, and mesas).  These structures provide…

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October 15, 2016 Blogs
Overcoming spin-coating challenges for square substrates

Process application engineers often encounter a variety of complex challenges related to deposition by spin coating, as many variables affect the quality of the spin-applied coating. These variables have critical…

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October 15, 2016 Blogs
Thermally curable middle layer for 193-nm trilayer resist process

New lithographic compositions, for use as middle layers in trilayer processes  resist processes can be applied as very thin films with a very thin layer of photoresist being applied to…

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