Gapfilling and Planarization Materials

Contact Us

Gapfill and Planarizing Materials for Every Need

Brewer Science's gapfill and planarizing materials are designed to planarize a multitude of incoming substrates with tight pitch and high-aspect-ratio topographies. Our materials are designed to be compatible with common upstream and downstream processes and materials to enable a wide spectrum of integration options for our customers.

Multiple Material Platforms

The planarizing carbon layer, or spin-on-carbon (SOC) layer, is an essential material to planarize incoming substrate and provide the desired optical control and etch transfers. Brewer Science’s OptiStack® SOC110/120 materials are robust, industry-proven SOC products that fulfill most gapfilling, planarizing, and etch transfer needs. Recently, Brewer Science introduced OptiStack® SOC410/450 materials, which can be used at 400-550°C as a high-temperature SOC (HT-SOC). They are designed to be compatible with chemical vapor deposition (CVD) processes to form a multilayer stack for pattern transfer. The high carbon content and hardness, resulting from a high-temperature bake, help control line wiggling during etch transfer of high-resolution features and also allow these materials to be used as a carbon mandrel for self-aligned double patterning (SADP).


The OptiStack® PL200 materials are spin-on, silicon-containing gapfill materials designed to provide excellent gapfill for <10-nm trench and via structures commonly found in today’s advanced semiconductor manufacturing processes. These materials are designed to have low shrink in O2 but be easily removed with an SC1 clean even after high-temperature processing.

Brewer Science® GF 110 material is designed to gapfill and planarize very deep structures that can be found in analog, power, photonics, and 3D memory devices. We offer a variety of viscosity options for coating thickness up to 3 µm.

Benefits

  • Compatible with a variety of incoming substrates, such as Si, oxide, nitride, TiN, carbon hardmask, and others
  • Designed for coat track installation to simplify process integration and reduce capital requirements
  • Gapfilling as low as <10 nm without void
  • Planarizes over darkfield and brightfield structures as well as a wide range of pitches (<50 nm up to multiple microns). Long-range planarity can be further improved through etch-back or CMP processes
  • Both silicon and organic materials are available to enable process design with existing etch and clean schemes
  • Ultralow ions and defects, as well as complete removability, enables increased device yield
  • Solutions available for large-area as well as high-aspect-ratio processing and are combined with applications support to help optimize your process
Contact Us

Contact Us

Gapfilling and Planarization Materials

Top
Powered by Translations.com GlobalLink OneLink Software